Alisa Davidson
Revealed: August 05, 2026 at 5:44 am Up to date: August 05, 2026 at 5:45 am
Edited and fact-checked:
August 05, 2026 at 5:44 am
In Temporary
Samsung unveiled next-gen AI reminiscence at FMS 2026, showcasing zHBM, zNAND-O, and industry-first over 400 layer V10 BV-NAND for superior AI infrastructure.
Samsung Electronics unveiled its next-generation AI reminiscence portfolio on the Way forward for Reminiscence and Storage (FMS) 2026 convention in Santa Clara, California, presenting a complete expertise roadmap designed to fulfill the quick rising calls for of high-performance computing and synthetic intelligence infrastructure.
The corporate showcased roughly 30 reminiscence and storage applied sciences at an AI cloud server-inspired sales space, whereas Jin-Yub Lee, Govt Vice President and Head of Flash Product & Know-how, and Kyungryun Kim, Vice President of the DRAM Design Group, delivered the opening keynote titled “Driving the Wave of AI Revolution: 3D Improvements in Reminiscence & Storage Structure.”
Vertical Architectures Redefine Reminiscence-Processor Integration
On the heart of Samsung’s imaginative and prescient are two idea fashions that basically restructure how reminiscence interfaces with processors. The corporate launched zHBM, which vertically stacks high-bandwidth reminiscence straight above AI accelerators quite than positioning it alongside the chip. Samsung states that this design minimizes information journey distance, delivering roughly eight occasions the efficiency of HBM5, greater than ten occasions the reminiscence density, and thrice the vitality effectivity, whereas decreasing thermal resistance by over half.
The structure additionally helps customized mental property integration between layers, enabling tailor-made options for particular accelerators. Alongside zHBM, Samsung previewed zNAND-O, a V-NAND-based answer developed in four- and eight-layer variants that mixes excessive area effectivity with low latency for real-time edge AI workloads.
From 400-Layer NAND to Built-in Turnkey Manufacturing
Samsung additionally introduced V10 BV-NAND, the {industry}’s first Bonding V-NAND structure enabled by new wafer bonding expertise. That includes greater than 400 layers, the gadget will increase reminiscence density by roughly 58 % over the earlier V9 era whereas bettering learn, write, and I/O efficiency. The milestone arrives 13 years after Samsung launched the {industry}’s first V-NAND.
Past idea {hardware}, Samsung detailed its near-term manufacturing roadmap. Following the {industry}’s first mass manufacturing of HBM4 in February, the corporate started transport HBM4E samples in Might and exhibited its HBM5 mannequin at FMS 2026. Samsung additionally showcased LPDDR5X-PIM, the {industry}’s first low-power DDR reminiscence with processing-in-memory expertise, which executes computations inside the reminiscence array to restrict information motion and energy draw.
For information heart infrastructure, the PM1763 and BM1773 enterprise storage options had been featured. As the only built-in gadget producer with main capabilities throughout reminiscence, foundry, and superior packaging, Samsung highlighted its end-to-end turnkey technique, providing built-in design and manufacturing companies supposed to shorten growth cycles and optimize efficiency for AI semiconductor prospects.
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About The Creator
Alisa, a devoted journalist on the MPost, focuses on crypto, AI, investments, and the expansive realm of Web3. With a eager eye for rising tendencies and applied sciences, she delivers complete protection to tell and interact readers within the ever-evolving panorama of digital finance.
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Alisa, a devoted journalist on the MPost, focuses on crypto, AI, investments, and the expansive realm of Web3. With a eager eye for rising tendencies and applied sciences, she delivers complete protection to tell and interact readers within the ever-evolving panorama of digital finance.
Extra articles
